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 MPSW01 NPN General Purpose Amplifier
MPSW01
NPN General Purpose Amplifier
Features
* This device is designed for general purpose medium power amplifiers * Sourced from process 37
Absolute Maximum Ratings *
Symbol
VCEO VCBO VEBO IC PD TJ , TSTG
Note :
Ta = 25C unless otherwise noted
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Derate about 25C Operating Junction and Storage Temperature Range
Value
30 40 5.0 1.0 1.0 8.0 -55 to +150
Units
V V V A W mW/C C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. 1) These ratings are based on a maximum junction temperature 150 `C 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction to Case* Thermal Resistance, Junction to Ambien*
6cm2
Value
50 125
Units
C/W C/W
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min.
(c)2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MPSW01 Rev. A
MPSW01 NPN General Purpose Amplifier
Electrical Characteristics (Note) T
Symbol Off Characteristics
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO
a
= 25C unless otherwise noted
Parameter
Test Condition
MIN
MAX
Units
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current
IC = 10 mA, IB = 0 IC = 100 uA, IE = 0 IE = 100 uA, IC = 0 VCB = 30 V, IE = 0 VEB = 3.0 V, IC = 0
30 40 5.0 0.1 0.1
V V V uA uA
On Characteristics
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 1.0 A, VCE = 1.0 V 55 60 50 0.5 1.2 V V
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage * IC = 1.0A, IB = 100 mA Emitter-Base On Voltage * IC = 1.0A, VCE = 1.0 V
Small Signal Characteristics
fT Ccb
Note : 1) These ratings are based on a maximum junction temperature 150 `C 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations 3)
Small-Signal Current Gain Collector-Base Capacitance
IC = 50 mA, VCE = 10 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz
50 20
MHz pF
*Pulse Test: Pulse Width300s, Duty Cycle1.0%
Typical Characteristics
2 MPSW01 Rev. A
www.fairchildsemi.com
MPSW01 NPN General Purpose Amplifier
Typical Characteristics (continued)
3 MPSW01 Rev. A
www.fairchildsemi.com
MPSW01 NPN General Purpose Amplifier
Typical Characteristics (continued)
4 MPSW01 Rev. A
www.fairchildsemi.com
MPSW01 NPN General Purpose Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3
SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I17
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
5 MPSW01 Rev. A
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